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Combo Memory (Helen 3); Audio Concept; Audio Hw Architecture - Nokia 6680 RM-36 Service Manual

Mobile terminal
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RM-36
Nokia Customer Care
System Module

Combo memory (Helen 3)

The application memory of the device consists of NAND/DDR combo memory. Stacked DDR/NAND application
memory has 256 Mbit of DDR memory and 256 Mbit of flash memory. DDR DRAM memory is stacked above the
NAND flash.
Helen 3 includes a 16-bit dedicated memory interface called external memory interface fast (EMIFF). This is used
to support interface for DDR memory. OMAP1710 provides also NAND flash controller located on the shared
peripheral bus, providing support for 8-bit NAND flash. The interface requires an 8-bit address bus multiplexed
with 8-bit data bus and several control signals.
The core voltage for DDR is 1.8V, which is generated by discrete LDO (LP3999-1.8). 1.8V (VIO) is for DDR I/O voltage.
Both NAND core and I/O voltages are 1.8V generated by VIO.

Audio concept

Audio HW architecture

The functional core of the audio hardware is built around two ASICs: RAP 3G CMT engine ASIC and the mixed-
signal ASIC Retu.
Retu provides an interface for the transducers and the accessory connector. Because audio amplifiers are also
integrated into Retu, the only discrete electronics components needed for audio paths are audio filtering
components and EMC/ESD components.
There are three audio transducers:
• 8mm dynamic earpiece
• 16mm dynamic speaker
• electret microphone module
In addition to the audio transducers, Retu also provides an output for the dynamic vibra component.
TM
All galvanic audio accessories are connected to the Pop-Port
accessory connector.
A Bluetooth audio module BC02 that is connected to RAP3G supports Bluetooth audio functionality.
There is a separate application ASIC, Helen 3 (OMAP 1710) for Symbian applications.
Page 9–26
Company Confidential
Issue 1
Copyright ©2005 Nokia. All Rights Reserved.

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